Low Damage And Selective Etching of GaAs Using BCl3/SF6 Gas in ECR Plasma

Low Damage And Selective Etching of GaAs Using BCl3/SF6 Gas in ECR Plasma

著者名:

掲載資料名:

Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-2

発行年:

1996

開始ページ:

246

終了ページ:

252

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771528 [1566771528]

言語:

英語

請求記号:

E23400/962066

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013836
シリーズID:	PA00000028
会議名:	SOTAPOCS ; Meeting of the Electrochemical Society
回次:	24th ; 189th
会議開催地:	Los Angeles, CA, USA
会議開催年:	1996.05.05-1996.05.10

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