Rapid Technique for Determination of Si/SiO2 and Si/Si-O-N Interface State Densities Based on Measurement of Recombination Lifetimes
- 著者名:
Green, M.L. Sachse, J.-U. Higashi, G. Feldman, L.C. Boone, T. Brasen, D. - 掲載資料名:
- The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 96-1
- 発行年:
- 1996
- 開始ページ:
- 555
- 終了ページ:
- 567
- 総ページ数:
- 13
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771511 [156677151X]
- 言語:
- 英語
- 請求記号:
- E23400/962115
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
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6
国際会議録
A COMPARISON OF THE ROUGHNESS OF VARIOUS Si/SiO2 INTERFACES USING SYNCHROTRON X-RAY DIFFRACTION
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SPIE-The International Society for Optical Engineering |