Nitrogen at Si-SiO2 Interfaces: Chemical Bonding and Electrical Performance

Nitrogen at Si-SiO2 Interfaces: Chemical Bonding and Electrical Performance

著者名:

掲載資料名:

The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-1

発行年:

1996

開始ページ:

441

終了ページ:

455

総ページ数:

15

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771511 [156677151X]

言語:

英語

請求記号:

E23400/962115

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013835
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	3rd
会議開催地:	Los Angeles, CA, USA
会議開催年:	1996.05.05-1996.05.10

類似資料:

1 国際会議録 Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces Koh, K., Niimi, H., Lucovsky, G. MRS - Materials Research Society	7 国際会議録 Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability Lucovsky, G., Lee, D. R., Jing, Z., Whitten, J. L., Parker, C., Hauser, J. R. MRS - Materials Research Society
2 国際会議録 Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Re- mote Plasma Assisted Processing Koh, K., Niimi, H., Lucovsky, G. Electrochemical Society	8 国際会議録 Electrical Performance of Stacked High-ti Gate Dielectrics: Remote Plasma CVD Ta2O5 and (Ta2O5)x(SiO2)1-x Alloys with Ultrathin Plasma Processed Si02 Interface … Niimi, H., Johnson, R.S., Lucovsky, C., Massoud, H.Z. Electrochemical Society
3 国際会議録 Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature … Lucovsky,G., Niimi,H. Trans Tech Publications	9 国際会議録 Preparation of Ultrathin Oxide Films by Low-Temperature Remote Plasma-Assisted Process Niimi, H., Koh, K., Lucovsky, G. Electrochemical Society
4 国際会議録 Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen Lucovsky, G. MRS - Materials Research Society	10 国際会議録 A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111) Yasuda, T., Lee, D. R., Bjorkman, C. H., Ma, Y., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K., Kurz, H. MRS - Materials Research Society
5 国際会議録 Controlled Incorporation of Nitrogen at the Top Surface of Silicon Oxide Gate Dielectrics Niimi, H., Koh, K., Lucovsky, G. MRS - Materials Research Society	11 国際会議録 Controlled Nitrogen-Atom Incorporation at Si-SiO2 Interfaces in MIS Devices Lee, David R., Parker, Christopher G., Hauser, John R., Lucovsky, Gerald MRS - Materials Research Society
6 国際会議録 INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES Bjorkman, C.H., Lee, D.R., Lucovsky, G. Materials Research Society	12 国際会議録 Chemical Bonding of Fluorine Atoms in SiOF Alloys: Microscopic Mechanisms for Reductions in the Dielectric Constant Relative to SiO2 Lucovsky, G., Yang, H. MRS - Materials Research Society

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