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Silicon Oxidation Kinetics - From Deal-Grove to VLSI Process Models

著者名:
Plummer, J.D.  
掲載資料名:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-1
発行年:
1996
開始ページ:
129
終了ページ:
142
総ページ数:
14
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
言語:
英語
請求記号:
E23400/962115
資料種別:
国際会議録

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