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EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2

著者名:
Cantin, J.L.
Schoisswohl, M.
von Bardeleben, H.J.
Morazzani, V.
Ganem, J.-J.
Trimaille, I.
さらに 1 件
掲載資料名:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-1
発行年:
1996
開始ページ:
28
終了ページ:
45
総ページ数:
18
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
言語:
英語
請求記号:
E23400/962115
資料種別:
国際会議録

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