Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography

Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography

著者名:

Kissinger, G.

掲載資料名:

ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-30

発行年:

1995

開始ページ:

156

終了ページ:

164

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771221 [1566771226]

言語:

英語

請求記号:

E23400/961027

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013834
シリーズID:	PA00000028
会議名:	ALTECH ; ESSDERC
回次:	1995 ; 25th (1995)
会議開催地:	Hague, The Netherlands
会議開催年:	1995.09.24-1995.09.27

類似資料:

1 国際会議録 Lattice Defects in High Quality As-Grown CZ Silicon,Studied with Light Scattering and Preferential Etching Techniques Vanhellemont,J., Kissinger,G., Graf,D., Kenis,K., Depas,M., Mertens,P., Lambert,U., Heyns,M., Claeys,C., Richter,H., … Trans Tech Publications	7 国際会議録 Defects in as-grown silicon and their evolution during beat treatments Vanhellemont,J., Doruberger,E., Esfandyari,J., Kissinger,G., Trauwaert,M.-A., Bender,H., Graf,D., Lambert,U., … Trans Tech Publications
2 国際会議録 Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing Kissinger, G., Grabolla, T., Morgenstern, G., Richter, H., Graef, D., Vanhellemont, J., Lambert, U., von Ammon, W. Electrochemical Society	8 国際会議録 PL study of oxygen related defects in silicon Libezny, M., Kaniava, A., Kissinger, G., Nijs, J., Claeys, C., Vanhellemont, J. Electrochemical Society
3 国際会議録 CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS Kissinger, G., Vanhellemont, J., Lambert, U., Dornberger, E., Sorge, R., Morgenstern, G., Grabolla, T., Graef, D., von … Electrochemical Society	9 国際会議録 On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon Vanhellemont, J., Kaniava, A., Libezny, M., Simoen, E., Kissinger, G., Gaubas, E., Claeys, C., Clauws, P. MRS - Materials Research Society
4 国際会議録 D-defects and metal-related flow patterns Kissinger, G., Morgenstern, G., Richter, H., Vanhellemont, J., Graef, D., Lambert, U., von Ammon, W., Wagner, P. Electrochemical Society	10 国際会議録 Simulation of grown-in voids in Czochralski silicon crystals Dornberger, E., Esfandyari, J., Graef, D., Vanhellemont, J., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society
5 国際会議録 Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich Kissinger, G., Morgenstern, G., Grabolla, T., Richter, H., Vanhellemont, J., Lambert, U., Graef, D. Electrochemical Society	11 国際会議録 On the Role of Point Defects in Gettering Processes Vanhellemont,J., Claeys,C. Trans Tech Publications
6 国際会議録 On the Nature of Grown-In Defects in Silicon: Dependence on Pulling Conditions and Evolution During Thermal Treatments Vanhellemont, J., Kissinger, G., Senkader, S., Graef, D., Kenis, K., Depas, M., Lambert, U., Wagner, P. Electrochemical Society	12 国際会議録 SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL Dornberger, E., Esfandyari, J., Vanhellemont, J., Graef, D., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society

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