Blank Cover Image

New surface photovoltage (SPV) method for high precision measurement of the minority carrier diffusion length and surface recombination velocity in silicon wafers

著者名:
Faifer, V.
Edelman, P.
Kontkiewicz, A.
Lagowski, J.
Hoff, A.
Dyukov, V.
Pravdivtsev, A.
Kornienko, I.
さらに 3 件
掲載資料名:
ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
95-30
発行年:
1995
開始ページ:
73
終了ページ:
82
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771221 [1566771226]
言語:
英語
請求記号:
E23400/961027
資料種別:
国際会議録

類似資料:

1 国際会議録 Recent Refinements in the Surface Photovoltage Method for Measuring Very Long Minority Carrier Diffusion Length

Lagowski, J., Faifer, V., Edelman, P.

Electrochemical Society
7 国際会議録 Determination of Minority Carrier Diffusion Lengths in thi Denuded Zones of Silicon Wafers by Surface Photovoltage Measurements

Tan,L.S., Koh,S.H., Prakash,S., Choi,W.K., Zhang,Z.

SPIE - The International Society for Optical Engineering
2 国際会議録 SURFACE PHOTOVOLTAGE MEASUREMENT OF MINORITY CARRIER DIFFUSION LENGTHS EXCEEDING WAFER THICKNESS: APPLICATION TO IRON MONITORING WITH PART PER QUADILLION …

Kontkiewicz, A. M., Lagowski, J., Dexter, M., Edelman, P.

MRS - Materials Research Society
8 国際会議録 NON-CONTACT, NO WAFER PREPARATION DEEP LEVEL, TRANSIENT SPECTROSCOPY (DLTS) BASED ON SURFACE PHOTOVOLTAGE (SPV)

Lagowski, Jacek, Edelman,. Piotr, Dexter, Mark

Materials Research Society
3 国際会議録 Fully Automated SPV Mapping of Iron in Silicon Wafers for In-Line Contamination Monitoring

Lagowski, J., Edelman, P.

Electrochemical Society
9 国際会議録 NON-CONTACT, WAFER-SCALE DEEP LEVEL TRANSIENT SPECTROS COPY (DLTS) BASED ON SURFACE PHOTOVOLTAGE (SPV)

Lagowski, Jacek, Morawski, Adrzej, Edelman, Piotr

Materials Research Society
4 国際会議録 SURFACE CHARGE IMAGING IN SEMICONDUCTOR WAFERS BY SURFACE PHOTOVOLTAGE (SPV)_

Edelman,. Piotr, Lagowski, Jacek, Jastrzebski, Lubek

Materials Research Society
10 国際会議録 Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Ma,Y., Lee,J.L., Benton,J.L., Boone,T., Eaglesham,D.J., Higashi,G.S.

SPIE-The International Society for Optical Engineering
5 国際会議録 A Novel Method for Studying Degradation Related to Plasma Processing of Silicon Wafers

Lagowski, J., Hoff, A., Jastrzebski, L., Edelman, P., Esry, T.

MRS - Materials Research Society
11 国際会議録 A New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO2 on Si

Edelman, P., Lagowski, J., Savchouk, A., Hoff, A., Jastrzebski, L., Persson, E.

MRS - Materials Research Society
6 国際会議録 Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers

M. Wilson, A. Savtchouk, I. Tasarov, J. D'Amico, P. Edelman

Electrochemical Society
12 国際会議録 Novel method to reduce the surface recombination velocity for the carrier lifetime measurement in silicon wafers

Arndt, W., Graff, K., Heim, P.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12