Fabrication and Characterization of High Performance AlInAs/GaInAs/InP DHBT X-Band Power Cell with InP Emitter Ballast Resistor

Fabrication and Characterization of High Performance AlInAs/GaInAs/InP DHBT X-Band Power Cell with InP Emitter Ballast Resistor

著者名:

掲載資料名:

Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-21

発行年:

1995

開始ページ:

432

終了ページ:

442

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771160 [1566771161]

言語:

英語

請求記号:

E23400/961020

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013826
シリーズID:	PA00000028
会議名:	Symposium on Wide Bandgap Semiconductors and Devices ; SOTAPOCS ; Meeting of the Electrochemical Society
回次:	1995 ; 23rd ; 188th
会議開催地:	Chicago, IL, USA
会議開催年:	1995.10.08-1995.10.13

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