Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
- 著者名:
Ren, F. Pearton, S.J. Hobson, W.S. Lothian, J.R. Lopata, J. Cole, M.W. Caballero, J.A. - 掲載資料名:
- Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 95-21
- 発行年:
- 1995
- 開始ページ:
- 346
- 終了ページ:
- 353
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771160 [1566771161]
- 言語:
- 英語
- 請求記号:
- E23400/961020
- 資料種別:
- 国際会議録
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2
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