Status of Ion Implantation Doping and Isolation of III-V Nitrides

Status of Ion Implantation Doping and Isolation of III-V Nitrides

著者名:

Zolper, J.C.

掲載資料名:

Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-21

発行年:

1995

開始ページ:

144

終了ページ:

151

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771160 [1566771161]

言語:

英語

請求記号:

E23400/961020

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013826
シリーズID:	PA00000028
会議名:	Symposium on Wide Bandgap Semiconductors and Devices ; SOTAPOCS ; Meeting of the Electrochemical Society
回次:	1995 ; 23rd ; 188th
会議開催地:	Chicago, IL, USA
会議開催年:	1995.10.08-1995.10.13

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2 国際会議録 Ion Implantation Doping and High Temperature Annealing of GaN Zolper, J. C., Crawford, M. Hagerott, Howard, A. J., Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Yuan, C., Stall, … MRS - Materials Research Society	8 国際会議録 Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges Zolper, J.C., Pearton, S.J. Electrochemical Society
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