Temperature Dependence of Early Voltage and Current Gain-Early Voltage Product in SiGe HBTs

Temperature Dependence of Early Voltage and Current Gain-Early Voltage Product in SiGe HBTs

著者名:

掲載資料名:

Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-9

発行年:

1995

開始ページ:

211

終了ページ:

220

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771030 [156677103X]

言語:

英語

請求記号:

E23400/952069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013816
シリーズID:	PA00000028
会議名:	Symposium on Low Temperature Electronics and High Temperature Superconductivity ; Meeting of the Electrochemical Society
回次:	3rd ; 187th
会議開催地:	Reno, NV, USA
会議開催年:	1995.05.21-1995.05.26

類似資料:

1 国際会議録 Low-Temperature Modeling of SiGe HBTs Using SCORPIO Richey, D.M., Cressler, J.D., Joseph, A.J., Jaeger, R.C. Electrochemical Society	7 国際会議録 Issues and Opportunities for Complementary SiGe HBT Technology J.D. Cressler Electrochemical Society
2 国際会議録 Potential for Silicon-Germanium-Carbon HBT Operation at Cryogenic Temperatures Jayanarayanan, S., Cressler, J.D., Richey, D.M. Electrochemical Society	8 国際会議録 The Effects of Neutron Irradiation on the cryogenic Properties of UHV/CVD SiGe HBTs Roldan, J.M., Cressler, J.D., Nguyen-Ngoc, D., Clark, S.D. Electrochemical Society
3 国際会議録 The Effects of Ionizing Radiation on SiGe HBTs Operated at 77 K Babcock, J.A., Cressler, J.D., Clark, S.D., Vempati, L.S., Harame, D.L. Electrochemical Society	9 国際会議録 Noise in SiGe HBTs: opportunities and challenges (Keynote Paper) Cressler, J. D. SPIE - The International Society of Optical Engineering
4 国際会議録 Ge Profile Optimization Issues for Cryogenically Operated SiGe HBTs Joseph, A.J., Cressler, J.D. Electrochemical Society	10 国際会議録 Anomalous low-frequency noise behavior in 210 GHz SiGe HBTs Jin, Z., Johansen, J. A., Cressler, J. D., Joseph, A. J. SPIE - The International Society of Optical Engineering
5 国際会議録 Operation of SiGe BICMOS Technology at Cryogenic Temperatures Bradford, G.D., Cressler, J.D., Harame, D.L. Electrochemical Society	11 国際会議録 Status and Trends in the Cryogenic Operation of SiGe Bipolar Technology Cressler, J.D. Electrochemical Society
6 国際会議録 Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K Z. Feng, G. Niu, C. Zhu, L. Najafizadeh, J.D. Cressler Electrochemical Society	12 国際会議録 The Cryogenic Operation of SiGe Heterojunction Bipolar Transistors: Status and Opportunities J.D. Cressler Electrochemical Society

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