Bonded and Trenched SOI with Buried Silicide Layers

Bonded and Trenched SOI with Buried Silicide Layers

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Semiconductor Wafer Bonding : physics and applications

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-7

発行年:

1995

開始ページ:

535

終了ページ:

545

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771016 [1566771013]

言語:

英語

請求記号:

E23400/952067

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013814
シリーズID:	PA00000028
会議名:	International Symposium on Semiconductor Wafer Bonding
回次:	3rd
会議開催地:	Reno, Nevada, USA
会議開催年:	1995.00.00

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