Deep trench isolation in bonded wafer SOI ICs using high density ICP etcher

Deep trench isolation in bonded wafer SOI ICs using high density ICP etcher

著者名:

Cowen, C S

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-3

発行年:

1995

開始ページ:

364

終了ページ:

374

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771535 [1566771536]

言語:

英語

請求記号:

E23400/962142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013813
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	7th ; 187th
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

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