Extraction of the interface and oxide charge density in SOI MOSFETs

Extraction of the interface and oxide charge density in SOI MOSFETs

著者名:

Simoen, E

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-3

発行年:

1995

開始ページ:

309

終了ページ:

317

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771535 [1566771536]

言語:

英語

請求記号:

E23400/962142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013813
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	7th ; 187th
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

類似資料:

1 国際会議録 Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs Lukyanchikova, N., Petrichuk, M., Garbar, N., Simoen, E., Claeys, C. Electrochemical Society	7 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
2 国際会議録 Evidence for a 'linear kink effect' in ultra-thin gate oxide SOI MOSFETs Mercha, A., Simoen, E., Rafi, J.-M., Clacys, C., Lukyanchikova, N., Petrichuk, M., Garbar, N. Electrochemical Society	8 国際会議録 Back-gate induced noise overshoot in partially-depleted SOI MOSFETs Lukyanchikova, N., Garbar, N., Smolanka, A., Simoen, E., Claeys, C. Kluwer Academic Publishers
3 国際会議録 Theoretical and Experimental Study of the Front and Back Interface Trap Density in Accumulation-Mode SOI MOSFETs Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	9 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society
4 国際会議録 The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures Nicolett, A.S., Martino, J.A., Simoen, F., Claeys, C. Electrochemical Society	10 国際会議録 Determination of Silicon Film Doping Concentration and Back Oxide Charge Density using SOI-MOS Capacitor Sonnenberg, V., Martino, J.A. Electrochemical Society
5 国際会議録 A Simple Method to Extract the Oxide Charge Density at the Buried Oxide/Substrate Interface in SOI Capacitor Sonnenberg, V, Martino, J Electrochemical Society	11 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
6 国際会議録 Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor Sonnenberg, V., Martino, J.A. Electrochemical Society	12 国際会議録 The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs Camillo, L.M., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society

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