Measurement of generation lifetime in partially depleted SOI MOSFETs | 東京科学大学図書館文献データベース

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Measurement of generation lifetime in partially depleted SOI MOSFETs

著者名:

さらに 6 件

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-3

発行年:

1995

開始ページ:

263

終了ページ:

270

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771535 [1566771536]

言語:

英語

請求記号:

E23400/962142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013813
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	7th ; 187th
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

類似資料:

1 国際会議録 TFSOI CMOS technology for low power applications Racanelli, M, Huong, W M, Shin, H C, Foerstner, J, Pork, H, Ford, J, Wetteroth, T, Hong, S, Shin, H, Wilson, S R Electrochemical Society	7 国際会議録 Impact of Body-to-Body Leakage on MOSFET Design Scaling in Partially Depleted SOI Sleight, J.W., Bryant, A., Clark, W., leong, M., Nowak, E.J., Rausch, W., Sherony, M.J. Electrochemical Society
2 国際会議録 Requirements for TFSOI materials and their effects on devices from a user's perspective Wilson, S.R., Hwang, B.Y., Foerstner, J., Wetteroth, T., Racanelli, M., Tsao, J., Huang, M. Electrochemical Society	8 国際会議録 A Steady-state Ramp Method for Carrier Lifetime Measurement in the SOI MOSFET Cheng, Z-Y, Ling, C H Electrochemical Society
3 国際会議録 Solutions to Gate Oxide Integrity on TFSOI Substrates Caused by PMOS Threshold-Voltage Implant Hong, S. Q., Wetteroth, T., Wilson, S. R., Steele, B., Schroder, D. K. MRS - Materials Research Society	9 国際会議録 Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi Electrochemical Society
4 国際会議録 Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model Gritsch, M., Kosina, H., Grasser, T., Selberherr, S. SPIE-The International Society for Optical Engineering	10 国際会議録 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society
5 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	11 国際会議録 A Simulation Study of Partially Depleted SOT MOSFETs Gritsch, M., Kosina, H., Grasser, T., Selberherr, S. Electrochemical Society
6 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society	12 国際会議録 Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications W. W. Xiong, C. Cleavelin, C. Hsu, M. Ma, K. Schruefer, K. Von Arnim, T. Schulz, I. Cayrefourcq, C. Mazure, P. Patruno, … Electrochemical Society

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