Physical phenomena involved in the Smart Cut process

Physical phenomena involved in the Smart Cut process

著者名:

Moleville, C

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-3

発行年:

1995

開始ページ:

34

終了ページ:

46

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771535 [1566771536]

言語:

英語

請求記号:

E23400/962142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013813
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	7th ; 187th
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

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1 国際会議録 Unibond SOI wafers achieved by Smart-Cut process Bruel, M., Aspar, B., Maleville, C., Moriceau, H., Auberton-Herve, A.J., Barge, T. Electrochemical Society	7 国際会議録 Characterisation of SOI substrates: application to recent SIMOX and UNIBOND wafers Aspar, B, Moriceau, H, Auberton-Herve, A J Electrochemical Society
2 国際会議録 Unibond SOI Wafers Achieved by Smart-Cut Process Bruel, M., Aspar, B., Maleville, C., Moriceau, H., Auberton-Herve, A.J., Barge, T. Electrochemical Society	8 国際会議録 A New Characterisation Process Used to Qualify SOI Films Moriceau, H, Aspar, B, Bruel, M, Cartier, A M, Morales, C, Soubie, A, Barge, T, Bressot, S, Maleville, C, Auberton, A I Electrochemical Society
3 国際会議録 Smart-Cut(R): The Basic Fabrication Process for Unibond(R) SOI Wafers Auberton-Herve, A. J., Barge, T., Metral, F., Bruel, M., Aspar, B., Meleville, C., Moriceau, H., Poumeyrol, T. MRS - Materials Research Society	9 国際会議録 Ultra thin buried oxide layers formed by low dose SIMOX processes Aspar, B., Pudda, C., Papon, A.M., Auberton-Herve, A.J., Lamure, J.M. Electrochemical Society
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