Barrier-Free AuGe-Au Ohmic Contacts for Double Doped AlInAs/GaInAs/InP HEMT Structures

Barrier-Free AuGe-Au Ohmic Contacts for Double Doped AlInAs/GaInAs/InP HEMT Structures

著者名:

掲載資料名:

Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-6

発行年:

1995

開始ページ:

287

終了ページ:

293

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771009 [1566771005]

言語:

英語

請求記号:

E23400/952066

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013812
シリーズID:	PA00000028
会議名:	Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS
回次:	1995 ; 22nd
会議開催地:	Reno, Nevada, USA
会議開催年:	1995.05.21-1995.05.26

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