Influence Of Vacuum Annealing on Native Si Point Defects
- 著者名:
Gossmann, H.-J. Mogi, T.K. Rafferty, C.S. Stolk, P.A. Eaglesham, D.J. Luftman, H.S. Unterwald, F.C. Boone, T. Thompson, M.O. Poate, J.M. - 掲載資料名:
- ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 95-5
- 発行年:
- 1995
- 開始ページ:
- 177
- 終了ページ:
- 186
- 総ページ数:
- 10
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770996 [1566770998]
- 言語:
- 英語
- 請求記号:
- E23400/952065
- 資料種別:
- 国際会議録
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