A 0.25mm MOSFET Technology Using In-Situ Rapid Thermal Gate Dielectrics

A 0.25mm MOSFET Technology Using In-Situ Rapid Thermal Gate Dielectrics

著者名:

掲載資料名:

ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

95-5

発行年:

1995

開始ページ:

68

終了ページ:

79

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770996 [1566770998]

言語:

英語

請求記号:

E23400/952065

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013811
シリーズID:	PA00000028
会議名:	International Symposium on Ultra Large Scale Integration Science and Technology
回次:	8th
会議開催地:	Reno, NV, USA
会議開催年:	1995.05.22-1995.05.26

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