Blank Cover Image

Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron

著者名:
Vuong, H-H.
Gossmann, H.-J.
Rafferty, C.S.
Luftman, H.S.
Unterwald, F.C.
Jacobson, D.C.
Ahrens, R.E
Boone, T.
Zeitzoff, P.M.
さらに 4 件
掲載資料名:
ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
95-5
発行年:
1995
開始ページ:
6
終了ページ:
12
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770996 [1566770998]
言語:
英語
請求記号:
E23400/952065
資料種別:
国際会議録

類似資料:

1 国際会議録 Influence Of Vacuum Annealing on Native Si Point Defects

Gossmann, H.-J., Mogi, T.K., Rafferty, C.S., Stolk, P.A., Eaglesham, D.J., Luftman, H.S., Unterwald, F.C., Boone, T., …

Electrochemical Society
7 国際会議録 The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon

Venables, D., Krishnamoorthy, V., Gossmann, H-J., Lilak, A., Jones, K. S., Jacobson, D. C.

MRS - Materials Research Society
2 国際会議録 MEASURING VACANCY DIFFUSIVITY AND VACANCY ASSISTED CLUSTERING BY NITRIDATION ENHANCED DIFFUSION OF Sb IN Si(100) DOPING SUPERLATTICES

Mogi, Toshiharu K., Gossmann, H.-J., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Boone, T., Thompson, Michael O., …

MRS - Materials Research Society
8 国際会議録 Shallow Boron Implant Activation

Fiory, A. T., Bourdelle, K. K., Agarwal, A., Gossmann, H-J., Rafferty, C. S.

MRS - Materials Research Society
3 国際会議録 Dopant Diffusion in Si(100) Doping Superlattices During Thermal Nitridation and Vacancy Assisted Sb Precipitation

Mogi, T.K., Gossmann, H-J., Eaglesham, D.J., Rafferty, C.S., Lufiman, H.S., Unterwald, F.C., Boone, T., Poate, J.M., …

Electrochemical Society
9 国際会議録 Si MBE ON H-PASSIVATED Si(100)

Eaglesham, D.J., Unterwald, F.C., Luftman, H.

Materials Research Society
4 国際会議録 BORON-ENHANCED-DIFFUSION OF BORON FROM ULTRA- LOW-ENERGY BORON IMPLANTATION

Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Yu E.

Electrochemical Society
10 国際会議録 Metal contamination issues resulting from new Si processes

Benton, J. L., Boone, T., Jacobson, D.C., Lin, Wen, Wilk, G.D., Krautter, H. W., Rosamilia, J.M., Rafferty, C.S.

Electrochemical Society
5 国際会議録 UNDERSTANDING AND CONTROLLING TRANSIENT ENHANCED DOPANT DIFFUSION IN SILICON

Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Luftman, H. S., Poate, J. M.

MRS - Materials Research Society
11 国際会議録 Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers

Agarwal, A., Gossmann, H-J., Eaglesham, D. J.

MRS - Materials Research Society
6 国際会議録 Atomistic Model of Transient-Enhanced Diffusion and Clustering of Boron in Silicon

Pelaz, L., Gilmer, G. H., Jaraiz, M., Gossmann, H-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

MRS - Materials Research Society
12 国際会議録 Antimony Clustering Due To High-Dose Implantation

Kalyanaraman, Ramki, Haynes, Tony E., Venezia, Vincent C., Jacobson, Dale C., Gossmann, Hans J., Rafferty, Conor S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12