Characterization of line-edge roughness in photoresist using an image fading technique

Characterization of line-edge roughness in photoresist using an image fading technique

著者名:

Pawloski, A.R. ( Advanced Micro Devices, Inc. (USA) )
Acheta, A. ( Advanced Micro Devices, Inc. (USA) )
Lalovic, I. ( Advanced Micro Devices, Inc. (USA) )
Fontaine, B.M.L. ( Advanced Micro Devices, Inc. (USA) )
Levinson, H.J. ( Advanced Micro Devices, Inc. (USA) )

掲載資料名:

Advances in Resist Technology and Processing XXI

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5376

発行年:

2004

開始ページ:

414

終了ページ:

425

総ページ数:

12

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819452894 [0819452890]

言語:

英語

請求記号:

P63600/5376.1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013725
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	2004 : 21st
会議開催地:	Santa Clara, CA, USA
会議開催年:	2004.02.23-2004.02.24

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