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Comprehensive analysis of sources of total CD variation in ArF resist perspective

著者名:
Kim, H.-W. ( Samsung Electronics Co., Ltd. (South Korea) )
Lee, H.-R. ( Samsung Electronics Co., Ltd. (South Korea) )
Kim, K.-M. ( Samsung Electronics Co., Ltd. (South Korea) )
Lee, S.Y. ( Samsung Electronics Co., Ltd. (South Korea) )
Kim, B.-C. ( Samsung Electronics Co., Ltd. (South Korea) )
Oh, S.-H. ( Samsung Electronics Co., Ltd. (South Korea) )
Woo, S.-G. ( Samsung Electronics Co., Ltd. (South Korea) )
Cho, H.-K. ( Samsung Electronics Co., Ltd. (South Korea) )
Han, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) )
さらに 4 件
掲載資料名:
Advances in Resist Technology and Processing XXI
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5376
発行年:
2004
開始ページ:
254
終了ページ:
265
総ページ数:
12
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819452894 [0819452890]
言語:
英語
請求記号:
P63600/5376.1
資料種別:
国際会議録

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1 国際会議録 Most feasible curing process for ArF resists in device integration aspect

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7 国際会議録 Evaluation of ArF CLM in the sub-100-nm DRAM cell

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2 国際会議録 Comparison of ArF bilayer resists for sub-90 nm L/S fabrication

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8 国際会議録 PEB sensitivity studies of ArF resist

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3 国際会議録 Impact of BARC on SEM shrinkage of ArF resist

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9 国際会議録 Influence of resin properties to resist performance at ArF lithography

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4 国際会議録 Performance of a SSQ-type ArF bilayer resist in 80-nm node DRAM line and space fabrication

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