Carrier mobility and series resistance MOSFET modeling
- 著者名:
- Babarada, F.N. ( Univ. Politehnica of Bucharest (Romania) )
- Profirescu, M.D. ( Univ. Politehnica of Bucharest (Romania) )
- Rusu, A. ( Univ. Politehnica of Bucharest (Romania) )
- Dunare, C. ( Univ. of Edinburgh (United Kingdom) )
- 掲載資料名:
- BioMEMS and nanotechnology : 10-12 December 2003, Perth, Australia
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5275
- 発行年:
- 2004
- 開始ページ:
- 354
- 終了ページ:
- 363
- 総ページ数:
- 10
- 出版情報:
- Bellingham, Wash., USA: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819451682 [0819451681]
- 言語:
- 英語
- 請求記号:
- P63600/5275
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
3
国際会議録
Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
Trans Tech Publications | |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
12
国際会議録
Parasitic Resistance Considerations of Using Elevated Source/Drain for Sub-0.25 μm MOSFET Technology
Electrochemical Society |