Blank Cover Image

DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

著者名:
Chen, C.-Y. ( National Cheng-Kung Univ. (Taiwan) )
Cheng, S.-Y. ( Oriental Institute of Technology (Taiwan) )
Chuang, H.-M. ( National Cheng-Kung Univ. (Taiwan) )
Chen, J.-Y. ( National Cheng-Kung Univ. (Taiwan) )
Fu, S.-I. ( National Cheng-Kung Univ. (Taiwan) )
Tsai, C.-H. ( National Cheng-Kung Univ. (Taiwan) )
Chang, C.-Y. ( National Cheng-Kung Univ. (Taiwan) )
Hung, C.-W. ( National Cheng-Kung Univ. (Taiwan) )
Chen, C.-W. ( National Cheng-Kung Univ. (Taiwan) )
Liu, W.-C. ( National Cheng-Kung Univ. (Taiwan) )
さらに 5 件
掲載資料名:
Microelectronics: Design, Technology, and Packaging
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5274
発行年:
2004
開始ページ:
425
終了ページ:
432
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819451675 [0819451673]
言語:
英語
請求記号:
P63600/5274
資料種別:
国際会議録

類似資料:

1 国際会議録 InP/InGaAs Tunneling-Emitter Bipolar Transistor (TEBT) with a Step-Graded Collector Structure Prepared by MOCVD

Chen, C.-Y., Lin, K.-W., Chiou, W.-H., Chuang, H.-M., Chen, J.-Y., Fu, S.-Y, Kao, C.-I., Liu, W.-C.

Electrochemical Society
7 国際会議録 Investigation of InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor

J. Tsai, Y. Kang, I. Hsu, T. Weng

Electrochemical Society
2 国際会議録 Multiple Negative-Differential-Resistance (MNDR) of a Graded AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs …

Liu, W.-C., Tsai, J.-H., Cheng, S.-Y., Wang, W.-C., Lin, P.-H., Chen, J.-Y.

Electrochemical Society
8 国際会議録 Δ-Doping InGaP/GaAs Heterojunction Bipolar Transistors

Liu, W.C., Cheng, S.Y., Chang, W.L., Pan, H.J., Shie, Y.H.

Electrochemical Society
3 国際会議録 Characteristics of InP/InGaAs Superlattice-Emitter Resonant Tunneling Bipolar Transistors (SERTBT)

Liu, W.C., Wang, W.C., Yu, K.H., Lin, K.W., Yen, C.H., Lin, K.P.

Electrochemical Society
9 国際会議録 InGaAs/InP Heterojunction Bipolar Transistors for Ultra Low Power Circuit Applications

Chang, P.C., Baca, A.G., Hafich, M.J., Ashby, C.I.

Electrochemical Society
4 国際会議録 Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers

Cheng, S.-Y., Chen, C.-Y., Chen, J.-Y., Chuang, H.-M., Liu, W.-C., Chang, W.-L., Pan, H.-J., Chen, P.-C.

SPIE - The International Society of Optical Engineering
10 国際会議録 Radiative and nonradiative recombinations in efficient light-emitting metal-oxide-silicon tunneling diodes

Chen, M.-J., Chang, J.-F., Liang, E.-Z., Lin, C.-F., Liu, C.W., Tsai, C.S.

SPIE - The International Society of Optical Engineering
5 国際会議録 InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Cheng, C.-C., Cheng, S.-Y., Chuang, H.-M., Chen, C.-Y., Lai, P.-H., Kao, C.-I., Hong, C.-W., Chen, C.-W., Liu, W.-C.

SPIE - The International Society of Optical Engineering
11 国際会議録 An Innovative Planarization Technology For Ultra High Frequency InP/InGaAs Heterojunction Bipolar Transistor (HBT) Manufacturing

Chang, X. Zeng P.C., Yamamoto, J., Sawdai, D., Gutierrez-Aitken, A., Barsky, M., Olson, S., Oki, A.

Electrochemical Society
6 国際会議録 MOCVD Grown AlInAs/InGaAs Long-Period-Superlattice Resonant-Tunneling Transistor (LPSRTT)

Cheng, S.-Y., Lin, P.-H., Wang, W.-C., Chen, J.-Y., Liu, W.-C.

Electrochemical Society
12 国際会議録 Comparison of n- and p-Type InGaAs/InP Quantum Well Infrared Photodetectors

Sengupta, D. K., Malin, J. I., Jackson, S. L., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12