Development of GaInNAs-based 1.3-μm VCSEL
- 著者名:
Ramakrishnan, A. ( Infineon Technologies AG (Germany) ) Ebbinghaus, G. ( Infineon Technologies AG (Germany) ) Lima, A. ( Infineon Technologies AG (Germany) ) Supper, D. ( Infineon Technologies AG (Germany) ) Kristen, G. ( Infineon Technologies AG (Germany) ) Popp, M. ( Infineon Technologies AG (Germany) ) Degen, C. ( Infineon Technologies AG (Germany) ) Althaus, H.-L. ( Infineon Technologies AG (Germany) ) Killer, T. ( Infineon Technologies AG (Germany) ) Scholz, R. ( Infineon Technologies AG (Germany) ) Melinde, M. ( Infineon Technologies AG (Germany) ) Sauter, M. ( Infineon Technologies AG (Germany) ) Weigert, M. ( Infineon Technologies AG (Germany) ) Riechert, H. ( Infineon Technologies AG (Germany) ) Steinle, G. ( Infineon Technologies AG (Germany) ) - 掲載資料名:
- Semiconductor optoelectronic devices for lightwave communication :8-10 September 2003, Orlando, Florida, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5248
- 発行年:
- 2003
- 開始ページ:
- 127
- 終了ページ:
- 134
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819451316 [0819451312]
- 言語:
- 英語
- 請求記号:
- P63600/5248
- 資料種別:
- 国際会議録
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10
国際会議録
GaInNAs/GaAs Multiple Quantum Wells at 1.3 μm Wavelength Grown by Gas-Source Molecular Beam Epitaxy
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