Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K

著者名:

Lee, H.S.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1437

終了ページ:

1440

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 SiC JMOSFETs for High-Temperature Stable Circuit Operation Koo, S.M., Zetterling, C.M., Lee, H.S., Oestling, M. Trans Tech Publications	7 国際会議録 Current Gain Dependence on Emitter Width in 4H-SiC BJTs Domeij, M., Lee, H.S., Zetterling, C.M., Ostling, M., Schoner, A. Trans Tech Publications
2 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications	8 国際会議録 Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE B. Buono, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications
3 国際会議録 A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors K.G.P. Eriksson, M. Domeij, H.S. Lee, C.M. Zetterling, M. Östling Trans Tech Publications	9 国際会議録 A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling, E.O. Sveinbjornsson Trans Tech Publications
4 国際会議録 Extrinsic Base Design of SiC Bipolar Transistors Danielsson, E., Domeij, M., Zetterling, C.M., Oestling, M., Schoner, A. Trans Tech Publications	10 国際会議録 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, R. Ghandi, M. Östling Trans Tech Publications
5 国際会議録 Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors Koo, S.-M., Lee, S.-K., Zetterling, C.-M., OEstling, M., Forsberg, U., Janzen, E. Trans Tech Publications	11 国際会議録 Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability R. Ghandi, H.S. Lee, M. Domeij, B. Buono, C.M. Zetterling Trans Tech Publications
6 国際会議録 4H-SiC Power BJTs with High Current Gain and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling Trans Tech Publications	12 国際会議録 Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs Koo, S.-M., Domeij, M., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzen, E. Trans Tech Publications

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