Extrinsic Base Design of SiC Bipolar Transistors

Extrinsic Base Design of SiC Bipolar Transistors

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1117

終了ページ:

1120

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer Danielsson, E., Domeij, M., Lee, H. S., Zetterling, C. M., Ostling, M., Schoner, A., Hallin, C. Trans Tech Publications	7 国際会議録 Current Gain Dependence on Emitter Width in 4H-SiC BJTs Domeij, M., Lee, H.S., Zetterling, C.M., Ostling, M., Schoner, A. Trans Tech Publications
2 国際会議録 Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors Danielsson, E., Zetterling, C.-M., OEstling, M., Forsberg, U., Janzen, E. Trans Tech Publications	8 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications
3 国際会議録 Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K Lee, H.S., Koo, S.M., Zetterling, C.M., Danielsson, E., Domeij, M., Oestling, M. Trans Tech Publications	9 国際会議録 Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors Liu, W., Danielsson, E., Zetterling, C.-M., Ostling, M. Trans Tech Publications
4 国際会議録 Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States Domeij, M., Danielsson, E., Lee, H. S., Zetterling, C. M., Ostling, M. Trans Tech Publications	10 国際会議録 SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance Mikael Östling, Martin Domeij, Carina Zaring, Andreij Konstantinov, Reza Ghandi, Benedetto Buono, Anders Hallen, Carl … Materials Research Society
5 国際会議録 A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors K.G.P. Eriksson, M. Domeij, H.S. Lee, C.M. Zetterling, M. Östling Trans Tech Publications	11 国際会議録 Total Dose Effects on 4H-SiC Bipolar Junction Transistors S.S. Suvanam, L. Lanni, B.G. Malm, C.M. Zetterling, A. Hallén Trans Tech Publications
6 国際会議録 Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors Danielsson, E., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzen, E. Trans Tech Publications	12 国際会議録 Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures Lee, H. S., Domeij, M., Danielsson, E., Zetterling, C. M., Ostling, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12