The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1053

終了ページ:

1056

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

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2 国際会議録 8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation Nakayama, K., Sugawara, Y., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Asano, K., Ishii, R. Trans Tech Publications	8 国際会議録 Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes Stahlbush, R.E., Fedison, J.B., Arthur, S.D., Rowland, L.B., Kretchmer, J.W., Wang, S. Trans Tech Publications
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6 国際会議録 Microstructural Aspects and Mechanism of Degradation of 4H-SiC PiN Diodes Under Forward Biasing Pirouz, Pirouz, Zhang, Ming, Galeckas, Augustinas, Linnros, Jan Materials Research Society	12 国際会議録 Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT K.D. Hobart, E.A. Imhoff, F.J. Kub, A.R. Hefner, T.H. Duong Trans Tech Publications

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