Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC ? Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?

Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC ? Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

909

終了ページ:

912

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

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