Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC

Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC

著者名:

Matsuura, H.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

751

終了ページ:

754

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

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1 国際会議録 Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC Matsuura, H., Sugiyama, K., Nishikawa, K., Nagata, T., Fukunaga, N. Trans Tech Publications	7 国際会議録 Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition S.Y. Ji, K. Kojima, Y. Ishida, H. Tsuchida, S. Yoshida Trans Tech Publications
2 国際会議録 Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation H. Matsuura, H. Yanagisawa, K. Nishino, T. Nojiri, S. Onoda Trans Tech Publications	8 国際会議録 Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida Trans Tech Publications
3 国際会議録 Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons H. Matsuura, N. Minohara, Y. Inagawa, M. Takahashi, T. Ohshima, H. Itoh Trans Tech Publications	9 国際会議録 Electrical Properties of Mg-Implanted 4H-SiC H. Matsuura, T. Morine, S. Nagamachi Trans Tech Publications
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