Blank Cover Image

In-Situ Er-Doping of SiC Bulk Single Crystals

著者名:
Mueller, R.
Desperrier, P.
Seitz, C.
Weisser, M.
Magerl, A.
Maier, M.
Winnacker, A.
Wellmann, P.
さらに 3 件
掲載資料名:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
シリーズ名:
Materials science forum
シリーズ巻号:
457-460
発行年:
2004
開始ページ:
723
終了ページ:
726
総ページ数:
4
出版情報:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

Desperrier, P., Mueller, R., Winnacker, A., Wellmann, P.J.

Trans Tech Publications
7 国際会議録 In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

P.J. Wellmann, K. Konias, P. Hens, R. Hock, A. Magerl

Trans Tech Publications
2 国際会議録 Photoluminescence Study of In Situ Rare Earth Doped PVT-Grown SiC Single Crystals

Schmitt, H., Muller, R., Maier, M., Winnacker, A., Wellmann, P.

Trans Tech Publications
8 国際会議録 Stability Criteria for 4H-SiC Bulk Growth

Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A.

Trans Tech Publications
3 国際会議録 Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction

Weisser, M., Seitz, C., Wellmann, P.J., Hock, R., Magerl, A.

Trans Tech Publications
9 国際会議録 In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC

K. Konias, R. Hock, M. Stockmeier, P.J. Wellmann, M. Miller, S. Ossege, A. Magerl

Trans Tech Publications
4 国際会議録 [0115] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction

Seitz, C., Herro, Z. G., Epelbaum, B. M., Winnacker, A., Hock, R., Magerl, A.

Trans Tech Publications
10 国際会議録 Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum

P. Hens, U. Künecke, P.J. Wellmann

Trans Tech Publications
5 国際会議録 Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

Bickermann, M., Weingartner, R., Herro, Z., Hofmann, D., Kunecke, U., Wellmann, P.J., Winnacker, A.

Trans Tech Publications
11 国際会議録 On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging

Wellmann, P. J., Bickermann, M., Grau, M., Hofmann, D., Straubinger, T. L., Winnacker, A.

MRS-Materials Research Society
6 国際会議録 Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide

Herro, Z.G., Epelbaum, B.M., Bickermann, M., Masri, P., Seitz, C., Magerl, A., Winnacker, A.

Trans Tech Publications
12 国際会議録 Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

Wellmann, P. J., Straubinger, T. L., Desperrier, P., Muller, R., Kunecke, U., Sakwe, S. A., Schmitt, H., Winnacker, A., …

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12