Impurity Conduction Observed in Al-Doped 6H-SiC

Impurity Conduction Observed in Al-Doped 6H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

685

終了ページ:

688

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Impurity Conduction in Silicon Carbide M. Krieger, K. Semmelroth, H.B. Weber, G. Pensl, M. Rambach, L. Frey Trans Tech Publications	7 国際会議録 Microstructure of Cubic SiC Grown by the Modified Lely-Method Nerding, M., Semmelroth, K., Pensl, G., Nagasawa, H., Strunk, H.P. Trans Tech Publications
2 国際会議録 Ionization Energies of Phosphorus Donors in 6H-SiC F. Schmid, K. Semmelroth, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications	8 国際会議録 Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy Puesche, R., Hundhausen, M., Ley, L., Semmelroth, K., Schmid, F., Pensl, G., Nagasawa, H. Trans Tech Publications
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