Low Temperature Annealing of Optical Centres in 4H SiC

Low Temperature Annealing of Optical Centres in 4H SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

637

終了ページ:

640

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide Steeds, J. W., Furkert, S. A., Sullivan, W., Hayes, J. M., Wright, N. G. Trans Tech Publications	7 国際会議録 Investigation of the Displacement Threshold of Si in 4H SiC Sullivan, W., Steeds, J.W. Trans Tech Publications
2 国際会議録 Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications	8 国際会議録 Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics J.W. Steeds Trans Tech Publications
3 国際会議録 High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight Mattausch, A, Bockstedte, M., Pankratov, O., Steeds, J.W., Furkert, S.A., Hayes, J.M., Sullivan, W., Wright, N.G. Trans Tech Publications	9 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications
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5 国際会議録 A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC W. Sullivan, J.W. Steeds Trans Tech Publications	11 国際会議録 Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature … Steeds, J.W., Carosella, F., Evans, A.G., Ismail, M.M., Danks, L. R., Voegeli, W. Trans Tech Publications
6 国際会議録 The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications	12 国際会議録 Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy Steeds, J.W., Evans, G.A., Furkert, S., Ley, L., Hundhausen, M., Schulz, N., Pensl, G. Trans Tech Publications

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