Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy

著者名:

Reshanov, S.A.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

513

終了ページ:

516

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy S.A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki Trans Tech Publications	7 国際会議録 Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy Kawasuso, A., Weidner, M., Redmann, F., Frank, T., Krause-Rehberg, R., Pensl, G., Sperr, P., Triftshauser, W., Itoh, H. Trans Tech Publications
2 国際会議録 Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons M. Weidner, L. Trapaidze, G. Pensl, S.A. Reshanov, A. Schöner Trans Tech Publications	8 国際会議録 Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy Kawasuso, A., Weidner, M., Redmann, F., Frank, T., Krause-Rehberg, R., Pensl, G., Sperr, P., Triftshauser, W., Itoh, H. Trans Tech Publications
3 国際会議録 Electrical and Optical Characterization of SiC Pensl, G., Schmid, F., Ciobanu, F., Laube, M., Reshanov, S.A., Schulze, N., Semmelroth, K., Nagasawa, H., Schoner, A., … Trans Tech Publications	9 国際会議録 Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors S. Roensch, S. Hertel, S. Reshanov, A. Schöner, M. Krieger Trans Tech Publications
4 国際会議録 Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy Reshanov, S.A., Klettke, O., Pensl, G. Trans Tech Publications	10 国際会議録 Selenium and Tellurium Double Donors in SiC S.A. Reshanov, H.B. Weber, G. Pensl, A. Schoener, H. Nagasawa Trans Tech Publications
5 国際会議録 Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation Weidner, M., Pensl, G., Nagasawa, H., Schoner, A., Ohshima, T. Trans Tech Publications	11 国際会議録 Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices R. Esteve, A. Schöner, S.A. Reshanov, C.-M. Zetterling Materials Research Society
6 国際会議録 Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC Reshanov, S. A., Pensl, G. Trans Tech Publications	12 国際会議録 Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12