Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC

Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

473

終了ページ:

476

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Defects in Semi-Insulating SiC Substrates Son, N.T., Magnusson, B., Zolnai, Z., Ellison, A., Janzen, E. Trans Tech Publications	7 国際会議録 As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC Magnusson, B., Ellison, A., Carlsson, F.H.C., Son, N.T., Janzen, E. Trans Tech Publications
2 国際会議録 Defects in High-Purity Semi-Insulating SiC Son, N.T., Magnusson, B., Zolnai, Z., Ellison, A., Janzen, E. Trans Tech Publications	8 国際会議録 Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in … Gali, A., Deak, P., Rauls, E., Ordejon, P., Carlsson, F.H.C., Ivanov, I.G., Son, N.T., Janzen, E., Choyke, W.J. Trans Tech Publications
3 国際会議録 A deep photoluminescence band in 4H SiC related to the silicon vacancy Sorman,E., Son,N.T., Chen,W.M., Hallin,C., Lindstrom,J.L., Janzen,E. Trans Tech Publications	9 国際会議録 Intrinsic Defects in HPSI 6H-SiC: An EPR Study P. Carlsson, N.T. Son, B. Magnusson, A. Henry, E. Janzén Trans Tech Publications
4 国際会議録 Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance Son, N.T., Hallin, C., Janzen, E. Trans Tech Publications	10 国際会議録 Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation N.T. Son, P. Carlsson, B. Magnusson, E. Janzen Trans Tech Publications
5 国際会議録 Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance Son, N.T., Hallin, C., Janzen, E. Trans Tech Publications	11 国際会議録 Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates N.T. Son, P. Carlsson, A. Gällström, B. Magnusson, E. Janzén Trans Tech Publications
6 国際会議録 The Neutral Silicon Vacancy in 6H and 4H SiC Sorman,E., Chen,W.M., Son,N.T., Hallin,C., Lindstrom,J.L., Monemar,B., Janzen,E. Trans Tech Publications	12 国際会議録 Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC P. Carlsson, N.T. Son, T. Umeda, J. Isoya, E. Janzen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12