Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 457-460
- 発行年:
- 2004
- 開始ページ:
- 261
- 終了ページ:
- 264
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Trans Tech Publications |
Trans Tech Publications |
2
国際会議録
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
国際会議録
Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa Surfaces
Materials Research Society |