Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

205

終了ページ:

208

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	7 国際会議録 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition Nakamura, S., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition Nakamura, S., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications
4 国際会議録 Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H. Trans Tech Publications
5 国際会議録 Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes Fujiwara, H., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society
6 国際会議録 Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications	12 国際会議録 Growth and Electrical Characterization of 4H-SiC Epilayers T. Kimoto, K. Danno, T. Hori, H. Matsunami Trans Tech Publications

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