Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent

Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent

著者名:

Kusunoki, K.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

123

終了ページ:

126

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

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1 国際会議録 TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent Kamei, K., Kusunoki, K., Munetoh, S., Ujihara, T., Nakajima, K. Trans Tech Publications	7 国際会議録 Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere K. Kusunoki, K. Kamei, N. Yashiro, T. Tanaka, A. Yauchi Trans Tech Publications
2 国際会議録 Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution Yashiro, N., Kusunoki, K., Kamei, K., Hasebe, M., Ujihara, T., Nakajima, K. Trans Tech Publications	8 国際会議録 Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique T. Tanaka, N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi Trans Tech Publications
3 国際会議録 Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution Kusunoki, K., Kamei, K., Ueda, Y., Naga, S., Ito, Y., Hasebe, M., Ujihara, T., Nakajima, K. Trans Tech Publications	9 国際会議録 Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi Trans Tech Publications
4 国際会議録 Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy Ujihara, T., Munetoh, S., Kusunoki, K., Kamei, K., Usami, N., Fujiwara, K., Sazaki, G., Nakajima, K. Trans Tech Publications	10 国際会議録 XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi Trans Tech Publications
5 国際会議録 Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique Kusunoki, K., Kamei, K., Okada, N., Yashiro, N., Yauchi, A., Ujihara, T., Nakajima, K. Trans Tech Publications	11 国際会議録 Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method K. Kusunoki, K. Kamei, N. Yashiro, K. Moriguchi, N. Okada Trans Tech Publications
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