Large Diameter and Long Length Growth of SiC Single Crystal

Large Diameter and Long Length Growth of SiC Single Crystal

著者名:

Kato, T.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

99

終了ページ:

102

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Nishizawa, S.I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., Arai, K. Trans Tech Publications	7 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications
2 国際会議録 Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method Nishizawa, S.-i., Michikawa, Y., Kato, T., Hirose, F., Oyanagi, N., Arai, K. Trans Tech Publications	8 国際会議録 In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography Kato, T., Oyanagi, N., Yamaguchi, H., Takano, Y., Nishizawa, S., Arai, K. Trans Tech Publications
3 国際会議録 SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique Oyanagi, N., Nishizawa, S., Kato, T., Yamaguchi, H., Arai, K. Trans Tech Publications	9 国際会議録 Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth Kato, T., Oyanagi, N., Kitou, Y., Nishizawa, S., Arai, K. Trans Tech Publications
4 国際会議録 Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method Hirose, F., Kitou, Y., Oyanagi, N., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	10 国際会議録 Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth Kato, T., Oyanagi, N., Kitou, Y., Nishizawa, S., Arai, K. Trans Tech Publications
5 国際会議録 Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method Hirose, F., Kitou, Y., Oyanagi, N., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	11 国際会議録 Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth Nishizawa, S., Kato, T., Kitou, Y., Oyanagi, N., Arai, K. Trans Tech Publications
6 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	12 国際会議録 Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S., Arai, K. Trans Tech Publications

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