Characteristics of ZrO2/Al2O3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method

Characteristics of ZrO2/Al2O3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method

著者名:

掲載資料名:

Designing, processing and properties of advanced engineering materials : proceedings of the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials, held in Jeju, Korea, November 5-8, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

449-452

発行年:

2004

開始ページ:

497

終了ページ:

500

総ページ数:

4

出版情報:

Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499397 [0878499393]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013359
シリーズID:	PA00000012
会議名:	International Symposium on Designing, Processing and Properties of Advanced Engineering Materials
回次:	3rd
会議開催地:	Jeju, Korea
会議開催年:	2003.11.05-2003.11.08

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