Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam

Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam

著者名:

掲載資料名:

Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003

シリーズ名:

Materials science forum

シリーズ巻号:

445-446

発行年:

2004

開始ページ:

144

終了ページ:

146

総ページ数:

3

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499366 [0878499369]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013357
シリーズID:	PA00000012
会議名:	ICPA : International Conference on Positron Annihilation
回次:	13th
会議開催地:	Kyoto, Japan
会議開催年:	2003.09.00

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