Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC

Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC

著者名:

Kakanakova-Georgieva, A.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

991

終了ページ:

994

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition Forsberg,U., Birch,J., MacMillan,M.F., Persson,P.O.A., Hultman,L., Janzen,E. Trans Tech Publications	7 国際会議録 Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure Kakanakova-Georgieva, A., Forsberg, U., Magnusson, B., Yakimova, R., Janzen, E. Trans Tech Publications
2 国際会議録 SiC and III-Nitride Growth in Hot-Wall CVD Reactor Janzen, E., Bergman, J. P., Danielsson, O., Forsberg, U., Hallin, C., Hassan, J. ul, Henry, A., Ivanov, I. G., … Trans Tech Publications	8 国際会議録 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvajarvi, M., Janzen, E. Trans Tech Publications
3 国際会議録 Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC Persson, P.O.A., Hultman, L. Trans Tech Publications	9 国際会議録 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvaejaervi, M., Janzen, E. Trans Tech Publications
4 国際会議録 Growth of Epitaxial (SiC)x(AlN)1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition Tungasmita, S., Persson, P.O.A., Seppaenen, T., Hultman, L., Birch, J. Trans Tech Publications	10 国際会議録 Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD Forsberg, U., Henry, A., Danielsson, Oe., Rorsman, N., Eriksson, J., Wahab, Q., Storasta, L., Linnarsson, M.K., Janzen, … Materials Research Society
5 国際会議録 Growth of Epitaxial (SiC)x(AlN)1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition Tungasmita, S., Persson, P.O.A., Seppanen, T., Hultman, L., Birch, J. Trans Tech Publications	11 国際会議録 Structural Characterization of Wurtzite Al₁₋xInxN (0.1 T. Seppänen, P.O.Å. Persson, G.Z. Radnóczi, B. Pécz, L. Hultman, J. Birch Society of Vacuum Coaters
6 国際会議録 Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure Kakanakova-Georgieva, A., Forsberg, U., Magnusson, B., Yakimova, R., Janzen, E. Trans Tech Publications	12 国際会議録 High Growth Rate of α-SiC by Sublimation Epitaxy Syvajarvi,M., Yakimova,R., MacMillan,M.F., Tuominen,M., Kakanakova-Georgieva,A., Hemmingsson,C.G., Ivanov,I.G., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12