Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
- 著者名:
Kiritani, N. Hoshi, M. Tanimoto, S. Adachi, K. Nishizawa, S.-i. Yatsuo, T. Okushi, H. Arai, K. - 掲載資料名:
- Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 433-436
- 発行年:
- 2003
- 開始ページ:
- 669
- 終了ページ:
- 672
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499205 [0878499202]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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10
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Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
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