Traps at the Interface of 3C-SiC/SiO2-MOS-Structures

Traps at the Interface of 3C-SiC/SiO2-MOS-Structures

著者名:

Ciobanu, F.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

551

終了ページ:

554

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications	7 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications
2 国際会議録 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications	8 国際会議録 Electrical and Optical Characterization of SiC Pensl, G., Schmid, F., Ciobanu, F., Laube, M., Reshanov, S.A., Schulze, N., Semmelroth, K., Nagasawa, H., Schoner, A., … Trans Tech Publications
3 国際会議録 Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001) Afanas'ev, V.V., Campbell, S.A., Cheong, K.Y., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A., Zhong, L. Trans Tech Publications	9 国際会議録 SiC/SiO2 interface defects Afanas'ev, V. V. Kluwer Academic Publishers
4 国際会議録 Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications	10 国際会議録 Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface Afanas'ev,V.V., Stesmans,A., Harris,C.I. Trans Tech Publications
5 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications	11 国際会議録 Electron spin resonance features of the Pb1 interface defect in thermal(100)Si/SiO2 Stesmans,A., Afanas'ev,V.V. Trans Tech Publications
6 国際会議録 Traps at the SiC/SiO2-Interface Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, … Materials Research Society	12 国際会議録 Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface M. Krieger, S. Beljakowa, B. Zippelius, V.V. Afanas'ev, A.J. Bauer Trans Tech Publications

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