Electrical and Optical Characterization of SiC

Electrical and Optical Characterization of SiC

著者名:

Pensl, G.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

365

終了ページ:

370

総ページ数:

6

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-Doped SiC Pensl, Gerhard, Ciobanu, Florin, Krieger, Michael, Laube, Michael, Reshanov, Sergey, Schmid, Frank, Wagner, Gunter, … Materials Research Society	7 国際会議録 Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M. Trans Tech Publications
2 国際会議録 Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy Reshanov, S.A., Schneider, K., Helbig, R., Pensl, G., Nagasawa, H., Schoner, A. Trans Tech Publications	8 国際会議録 Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons M. Weidner, L. Trapaidze, G. Pensl, S.A. Reshanov, A. Schöner Trans Tech Publications
3 国際会議録 Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method Schulze, N., Gajowski, J., Semmelroth, K., Laube, M., Pensl, G. Trans Tech Publications	9 国際会議録 Codoping of 4H-SiC with N- and P-Donors by Ion Implantation Laube, M., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications
4 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications	10 国際会議録 Codoping of 4H-SiC with N- and P-Donors by Ion Implantation Laube, M., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications
5 国際会議録 Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy Puesche, R., Hundhausen, M., Ley, L., Semmelroth, K., Schmid, F., Pensl, G., Nagasawa, H. Trans Tech Publications	11 国際会議録 Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC Reshanov, S. A., Pensl, G. Trans Tech Publications
6 国際会議録 Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M. Trans Tech Publications	12 国際会議録 (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory G. Pensl, F. Schmid, S.A. Reshanov, H.B. Weber, M. Bockstedte, A. Mattausch, O. Pankratov, T. Ohshima, H. Itoh Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12