Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

著者名:

Bickermann, M.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

337

終了ページ:

340

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC Weingartner, R., Bickermann, M., Herro, Z., Kunecke, U., Sakwe, S.A., Wellmann, P.J., Winnacker, A. Trans Tech Publications	7 国際会議録 Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth Bickermann, M., Weingartner, R., Hofmann, D., Straubinger, T.L., Winnacker, A. Trans Tech Publications
2 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	8 国際会議録 Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth Bickermann, M., Weingartner, R., Hofmann, D., Straubinger, T.L., Winnacker, A. Trans Tech Publications
3 国際会議録 Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC Weingaertner, R., Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Wellmann, P.J., Winnacker, A. Trans Tech Publications	9 国際会議録 On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications
4 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	10 国際会議録 On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications
5 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	11 国際会議録 Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum P. Hens, U. Künecke, P.J. Wellmann Trans Tech Publications
6 国際会議録 Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	12 国際会議録 On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging Wellmann, P. J., Bickermann, M., Grau, M., Hofmann, D., Straubinger, T. L., Winnacker, A. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12