Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

著者名:

Yakimova, R.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

281

終了ページ:

284

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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4 国際会議録 Considerations on the Crystal Morphology in the Sublimation Growth of SiC Raback, P., Yakimova, R., Syvajarvi, M., Iakimov, T., Nieminen, R., Janzen, E. Trans Tech Publications	10 国際会議録 Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC Yakimova,R., Syvajarvi,M., Janzen,E. Trans Tech Publications
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