Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

著者名:

Neudeck, P.G.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

213

終了ページ:

216

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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2 国際会議録 Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers Neudeck, P.G., Powell, J.A., Trunek, A.J., Spry, D.J. Trans Tech Publications	8 国際会議録 Lateral Growth Expansion of 4H/6H-SiC M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy A.J. Trunek, P.G. Neudeck, A.A. Woodworth, J.A. Powell, D.J. Spry Trans Tech Publications
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4 国際会議録 Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy Neudeck, P.G., Powell, J.A., Trunek, A.J., Huang, X.R., Dudley, M. Trans Tech Publications	10 国際会議録 Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects Trunek, A.J., Neudeck, P.G., Powell, J.A., Spry, D.J. Trans Tech Publications
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