Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

189

終了ページ:

192

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations Savkina, N.S., Ratnikov, V.V., Shuman, V.B., Lebedev, A.A. Trans Tech Publications	7 国際会議録 High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate Strel'chuk, A.M., Lebedev, A.A., Kuznetsov, A.N., Savkina, N.S., Soloviev, V.A. Trans Tech Publications
2 国際会議録 TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth Sorokin, L.M., Hutchison, J.L., Sloan, J., Mosina, G.N., Savkina, N.S., Shuman, V.B., Lebedev, A.A. Trans Tech Publications	8 国際会議録 Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization Shuman, V. B., Savkina, N. S. Trans Tech Publications
3 国際会議録 TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth Sorokin, L.M., Hutchison, J.L., Sloan, J., Mosina, G.N., Savkina, N.S., Shuman, V.B., Lebedev, A.A. Trans Tech Publications	9 国際会議録 Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation Savkina, N.S., Strel'chuk, A.M., Sorokin, L.M., Mosina, G.N., Tregubova, A.S., Solov'ev, V.V., Lebedev, A.A. Trans Tech Publications
4 国際会議録 X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface Argunova, T.S., Gutkin, M.Yu., Je, J.H., Sorokin, L.M., Mosina, G.N., Savkina, N.S., Shuman, V.B., Lebedev, A.A. Trans Tech Publications	10 国際会議録 Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum Lebedev, A.A., Strel'chuk, A.M., Kuznetsov, A.N., Savkina, N.S. Trans Tech Publications
5 国際会議録 Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum Davydov, S.Yu., Savkina, N.S., Lebedev, A.A., Syvaejaervi, M., Yakimova, R. Trans Tech Publications	11 国際会議録 Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation Strel'chuk, A.M., Lebedev, A.A., Davydov, D.V., Savkina, N.S., Kuznetsov, A.N., Valakh, M.Ya., Kiselev, V.S., Romanyuk, … Trans Tech Publications
6 国際会議録 X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates Shulpina, I. L., Savkina, N. S., Shuman, V. B., Ratnikov, V. V., Syvajarvi, M., Yakimova, R. Trans Tech Publications	12 国際会議録 Porous SiC substrate materials for high-quality epitaxial and bulk growth Mynbaeva, M., Savkina, N., Zubrilov, A., Seredova, N., Scheglov, M., Titkov, A., Tregubova, A., Lebedev, A., … MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12