Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

著者名:

Sartel, C.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

165

終了ページ:

168

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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1 国際会議録 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications	7 国際会議録 Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates Blanc, C., Sartel, C., Souliere, V., Juillaguet, S., Monteil, Y., Camassel, J. Trans Tech Publications
2 国際会議録 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS Sartel, C., Souliere, V., Dazord, J., Monteil, Y., El-Harrouni, I., Bluet, J.M., Guillot, G. Trans Tech Publications	8 国際会議録 Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications
3 国際会議録 Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems Sartel, C., Balloud, C., Souliere, V., Juillaguet, S., Dazord, J., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications	9 国際会議録 Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS N. Habka, V. Souliere, J.M. Bluet, M. Soueidan, G. Ferro, Y. Monteil Trans Tech Publications
4 国際会議録 Optical Characterization of Full SiC Wafer El Harrouni, I., Bluet, J.M., Ziane, D., Mermoux, M., Baillet, F., Guillot, G. Trans Tech Publications	10 国際会議録 Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements Juillaguet, S., Zielinski, M., Balloud, C., Sartel, C., Consejo, C., Boyer, B., Souliere, V., Camassel, J., Monteil, Y. Trans Tech Publications
5 国際会議録 Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers M. Soueidan, G. Ferro, B. Nsouli, N. Habka, V. Souliere, G. Younes, K. Zahraman, J.M. Bluet, Y. Monteil Trans Tech Publications	11 国際会議録 Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging Pernot, E., El Harrouni, I., Mermoux, M., Bluet, J.M., Anikin, M., Chaussende, D., Pons, M., Madar, R. Trans Tech Publications
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